The team credits a composite indium gallium arsenide (InGaAs) quantum well (QW) channel structure with enabling the record frequency high-electron-mobility transistor (HEMT). The result from Kyoungpook National University (KNU), University of Ulsan and Quantum Semiconductor International Co Ltd in South Korea and NTT Device Technology Laboratories in Japan was presented online at the International Electron Devices Meeting (IEDM) at the end of 2020. 4 February 2021 Transistor cut-off frequency at 738GHzĪ research team in Korea and Japan has reported field-effect transistors (FETs) with a cut-off frequency of 738GHz, claiming this as “the highest f T of any FET with any material system”.
